John J. Hackenberg
10Patents
5h-index
24Co-inventors
62Inventor score
Filing activity: Sep 21, 1994 → Nov 21, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6246090A | Power trench transistor device source region formation using silicon spacer | Electricity | 32 | Expired |
| US5830279A | Device and method for improving corrosion resistance and etch tool integrity in dry metal etching | Electricity | 22 | Expired |
| US6455379B2 | Power trench transistor device source region formation using silicon spacer | Electricity | 12 | Expired |
| US5648678A | Programmable element in barrier metal device | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7528029B2 | Stressor integration and method thereof | Electricity | 5 | Active |
| US8258035B2 | Method to improve source/drain parasitics in vertical devices | Electricity | 3 | Active |
| US7097714B2 | Particulate removal from an electrostatic chuck | Electricity | 2 | Expired |
| US7972922B2 | Method of forming a semiconductor layer | Emerging Cross-Sectional Technologies | 1 | Active |
| US5837603A | Planarization method by use of particle dispersion and subsequent thermal flow | Electricity | 1 | Expired |
| US7687370B2 | Method of forming a semiconductor isolation trench | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.