Low noise-high linearity HEMT-HBT composite
US5838031A · kind A · utility
19Cited by
13References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1996 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | Mar 5, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/372
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
4-terminal HEMT-HBT composite devices, based upon monolithically integrated HEMT-HBT technology and configured in various topologies, are useful in a wide range of applications which currently utilize discrete MMICs. In particular, the 4-terminal topologies are easily configured as 3-terminal composite devices useful in various 2-port and 3-port MMIC circuit applications, such as low noise-high linearity amplifiers as well as mixers, which provide the benefits of a reduction in size, as well as corresponding cost while providing better performance than utilizing either HEMT or HBT devices individually.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.