Aaron K. Oki
19Patents
10h-index
17Co-inventors
65Inventor score
Filing activity: Aug 30, 1991 → Feb 2, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6465289B1 | Method of fabricating monolithic multifunction integrated circuit devices | Electricity | 34 | Expired |
| US5672522A | Method for making selective subcollector heterojunction bipolar transistors | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5323138A | Reliable thin film resistors for integrated circuit applications | Electricity | 20 | Expired |
| US5838031A | Low noise-high linearity HEMT-HBT composite | Electricity | 19 | Expired |
| US5162243A | Method of producing high reliability heterojunction bipolar transistors | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5448087A | Heterojunction bipolar transistor with graded base doping | Electricity | 15 | Expired |
| US5648666A | Double-epitaxy heterojunction bipolar transistors for high speed performance | Electricity | 14 | Expired |
| US6680494B2 | Ultra high speed heterojunction bipolar transistor having a cantilevered base | Electricity | 12 | Expired |
| US5631477A | Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor | Electricity | 12 | Expired |
| US6376867B1 | Heterojunction bipolar transistor with reduced thermal resistance | Electricity | 10 | Expired |
| US6072371A | Quenchable VCO for switched band synthesizer applications | Electricity | 10 | Expired |
| US5262335A | Method to produce complementary heterojunction bipolar transistors | Emerging Cross-Sectional Technologies | 9 | Expired |
| US5736417A | Method of fabricating double photoresist layer self-aligned heterojunction bipolar transistor | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5840612A | Method of fabricating very high gain heterojunction bipolar transistors | Electricity | 8 | Expired |
| US5930636A | Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes | Electricity | 5 | Expired |
| US6037646A | High-frequency GaAs substrate based schottky barrier diodes | Electricity | 3 | Expired |
| US5892248A | Double photoresist layer self-aligned heterojuction bipolar transistor | Emerging Cross-Sectional Technologies | 3 | Expired |
| US5986517A | Low-loss air suspended radially combined patch for N-way RF switch | Electricity | 2 | Expired |
| US6528829B1 | Integrated circuit structure having a charge injection barrier | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.