Method of forming a cadmium telluride/silicon structure

US5838053A · kind A · utility

Assignee

• Raytheon TI Systems, Inc. · US

Inventors

• Malcolm J. Bevan · Dallas, US
• Hung-Dah Shih · Plano, US

Key dates

• Filing date: Sep 19, 1996
• Grant date: Nov 17, 1998
• Expiry date: Sep 19, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

In one embodiment, a semiconductor structure is disclosed. The structure includes both a silicon and a cadmium telluride layer. Each may have a (100) lattice orientation. A plurality of buffer layers are disposed between the silicon layer and the cadmium telluride layer. Each of these buffer layers has a lattice constant which is greater than the lattice constant of the layer below it and less than the lattice constant of the layer above it. As examples, these buffer layers may comprise zinc sulfide, zinc selenide, zinc telluride or zinc tellurium selenide.