Malcolm J. Bevan
47Patents
7h-index
70Co-inventors
72Inventor score
Filing activity: Jul 19, 1996 → Aug 16, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7045431B2 | Method for integrating high-k dielectrics in transistor devices | Electricity | 37 | Expired |
| US5838053A | Method of forming a cadmium telluride/silicon structure | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6064066A | Bolometer autocalibration | Physics | 25 | Expired |
| US6919251B2 | Gate dielectric and method | Electricity | 19 | Expired |
| USD1034491S1 | Edge ring | General | 11 | Active |
| US6806149B2 | Sidewall processes using alkylsilane precursors for MOS transistor fabrication | Electricity | 9 | Expired |
| US5989933A | Method of forming a cadmium telluride/silicon structure | Emerging Cross-Sectional Technologies | 7 | Expired |
| US9054048B2 | NH3 containing plasma nitridation of a layer on a substrate | Electricity | 7 | Active |
| US7423326B2 | Integrated circuits with composite gate dielectric | Electricity | 6 | Expired |
| US8481433B2 | Methods and apparatus for forming nitrogen-containing layers | Electricity | 6 | Active |
| US9177806B2 | System and method for mitigating oxide growth in a gate dielectric | Electricity | 6 | Active |
| US7906441B2 | System and method for mitigating oxide growth in a gate dielectric | Electricity | 6 | Active |
| US8778816B2 | In situ vapor phase surface activation of SiO2 | Electricity | 5 | Active |
| US5959299A | Uncooled infrared sensors for the detection and identification of chemical products of combustion | Electricity | 4 | Expired |
| US10872763B2 | Treatments to enhance material structures | Electricity | 4 | Active |
| US5998809A | Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter | Electricity | 4 | Expired |
| US8748259B2 | Method and apparatus for single step selective nitridation | Electricity | 4 | Active |
| US9831091B2 | Plasma treating a process chamber | Electricity | 4 | Active |
| US6921703B2 | System and method for mitigating oxide growth in a gate dielectric | Electricity | 4 | Expired |
| US9023700B2 | Method and apparatus for single step selective nitridation | Electricity | 4 | Active |
| US7049242B2 | Post high voltage gate dielectric pattern plasma surface treatment | Electricity | 3 | Expired |
| US8546273B2 | Methods and apparatus for forming nitrogen-containing layers | Electricity | 3 | Active |
| US10049881B2 | Method and apparatus for selective nitridation process | Electricity | 3 | Active |
| US7018925B2 | Post high voltage gate oxide pattern high-vacuum outgas surface treatment | Electricity | 3 | Expired |
| US7339240B2 | Dual-gate integrated circuit semiconductor device | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.