Method of measuring the threshold voltage of metal-oxide semiconductor field-effect transistors
US5838164A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 16, 1996 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | Aug 16, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for accurately measuring the threshold voltage of a MOSFET device. A variable DC voltage is connected between the drain and the source, and the source and the substrate are grounded. The drain-to-source voltage is varied among a first predetermined number of levels in a first range that approaches zero volts. The value of one K parameter for each level of the drain-to-source voltage is obtained. A curve representing the K parameter versus drain-to-source voltage characteristic is plotted. The intercept of the curve with the K parameter axis, by linear extrapolation of the curve is obtained, the intercept represents the threshold voltage of the MOSFET device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.