Method for forming a ferroelectric material film by the sol-gel method, along with a process for a production of a capacitor and its raw material solution
US5840615A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 1997 |
| Grant date | Nov 24, 1998 |
| Priority date | — |
| Expiry date | Mar 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a ferroelectric material film, more particularly a lead zirconate titanate (PZT) film by the sol-gel method wherein a lowered oxidative sintering temperature may be adopted in preparing the ferroelectric material film with a perovskite crystalline structure, thereby reducing the risk of oxidation of metal electrodes and other circuits when the ferroelectric material film is employed as a dielectric in semiconductor devices, such as in a capacitor, for example. The method contemplates the preparation of a raw material solution containing an organometallic compound of a metallic element forming the ferroelectric material film, alkanolamine and/or stabilizer comprising a .beta.-diketone, with the concentration of the stabilizer being sufficient to provide a mole ratio to the total metal atoms of (stabilizer/total metal atoms)>3. The method then involves coating the raw material solution, drying the coated raw material solution to form a dried film, and sintering the dried film to form the ferroelectric material film wherein the oxidative sintering is carried out at a relatively low temperature of about 450.degree. C. in forming the ferroelectric material film with…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.