Method for manufacturing contact structure capable of avoiding short-circuit
US5840621A · kind A · utility
13Cited by
13References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 22, 1997 |
| Grant date | Nov 24, 1998 |
| Priority date | — |
| Expiry date | May 22, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/02
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing a contact structure, a first insulating layer, a first conductive layer and a silicon nitride layer are sequentially formed on a semiconductor substrate. The silicon nitride layer and the first conductive layer are anistropically etched with a first pattern mask. A sidewall of the first conductive layer is oxidized. A second insulating layer is formed on the entire surface, and a contact hole is perforated in the first and second insulating layers. Finally, a second conductive layer is buried in the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.