Coating solution and method for preparing the coating solution, method for forming insulating films for semiconductor devices, and method for evaluating the coating solution
US5840821A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1995 |
| Grant date | Nov 24, 1998 |
| Priority date | — |
| Expiry date | Nov 21, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A coating solution for forming an insulating film used in production of semiconductor devices includes siloxanes represented by a general formula: EQU SiR.sub.3 O.sub.1/2 !.sub.k SiR.sub.2 O.sub.2/2 !.sub.l SiRO.sub.3/2 !.sub.m SiO.sub.4/2 !.sub.n where each of k, l, m and n is an integer, R may be the same or different and represents at least one organic group, and a ratio of (3k+2l+m) to (k+l+m+n) is between about 0.8 and about 1.3. The present invention further relates to a method for preparing the coating solution, and a method for forming the insulating film using the coating solution, including the steps of coating the coating solution on a surface of a substrate of the semiconductor device to form a coated film, fluidizing the coated film at a temperature between about 150.degree. C. to about 300.degree. C. to planarize the surface of the substrate, and curing the fluidized coated film to form the insulating film. The present invention permits the formation of the insulating film with excellent properties such as an ability of fill up fine groves and to planarize the surface of the substrate, and a small shrinkage factor. The method for evaluating the coating solution using …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.