Semiconductor device including T1 GaAs layer
US5841156A · kind A · utility
5Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 1997 |
| Grant date | Nov 24, 1998 |
| Priority date | — |
| Expiry date | May 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes a GaAs substrate having a lattice constant; and a III-V mixed crystal semiconductor layer disposed on the GaAs substrate, containing Tl (thallium) and Ga (gallium) as Group III elements and As (arsenic) as a Group V element, and having a lattice constant larger than the lattice constant of the GaAs substrate. Therefore, the lattice mismatch of the III-V mixed crystal semiconductor layer with GaAs and the band gap energy of the III-V mixed crystal semiconductor layer are smaller than those of an InGaAs layer, resulting in a semiconductor device with improved operating characteristics and reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.