Lateral DMOS transistor for RF/microwave applications
US5841166A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1996 |
| Grant date | Nov 24, 1998 |
| Priority date | — |
| Expiry date | Sep 10, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/126
Abstract
An IGFET device (lateral DMOS transistor) with reduced cell dimensions which is especially suitable for RF and microwave applications, includes a semiconductor substrate having an epitaxial layer with a device formed in a surface of the epitaxial layer. A sinker contact is provided from the surface to the epitaxial layer to the substrate for use in grounding the source region to the grounded substrate. The sinker contact is aligned with the source region and spaced from the width of the channel region whereby lateral diffusion in forming the sinker contact does not adversely affect the pitch of the cell structure. The reduced pitch increases output power and reduces parasitic capacitance whereby the device is well-suited for low side switches and as an RF/microwave power transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.