Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same
US5841611A · kind A · utility
67Cited by
11References
60Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1995 |
| Grant date | Nov 24, 1998 |
| Priority date | — |
| Expiry date | Apr 27, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5616
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.