Epitaxial wafer and method of preparing the same
US5843590A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1995 |
| Grant date | Dec 1, 1998 |
| Priority date | — |
| Expiry date | Dec 19, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high performance epitaxial wafer which is useful, for example in a light emitting device is produced with a buffer layer. The epitaxial wafer has a substrate of a compound semiconductor selected from a group consisting of GaAs, GaP, InAs and InP. The buffer layer of GaN is grown on the substrate to a thickness within the range of 10 nm to 80 nm. An epitaxial layer of GaN is formed on the buffer layer. The buffer layer is grown at a first temperature by organic metal chloride vapor phase epitaxy, while the epitaxial layer is grown at a second temperature, which is higher than the first temperature, by the organic metal chloride vapor phase epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.