Semiconductor laser formed by layer intermixing
US5843802A · kind A · utility
20Cited by
7References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 1997 |
| Grant date | Dec 1, 1998 |
| Priority date | — |
| Expiry date | Sep 4, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a multiple layer semiconductor device, such as a laser, using impurity-induced, or vacancy-enhanced, intermixing of semiconductor layers to selectively inactivate quantum well regions in the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.