Modified clean recipe to suppress formation of BPSG bubble
US5843838A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1997 |
| Grant date | Dec 1, 1998 |
| Priority date | — |
| Expiry date | Aug 29, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a BPSG dielectric layer on a wafer without delamination in the fabrication of an integrated circuit device wherein a BPSG deposition chamber is used is described. Semiconductor device structures are provided in and on a semiconductor substrate. The BPSG deposition chamber is cleaned according to the following steps. The deposition chamber is cleaned using a fluorine-containing gas. The fluorine-containing gas is pumped out of the deposition chamber wherein residual fluorine-containing gas remains within the deposition chamber. A plasma is flowed into the deposition chamber wherein the plasma consumes all of the residual fluorine-containing gas. The plasma is purged from the deposition chamber to complete the cleaning of the BPSG deposition chamber. Thereafter, a layer of BPSG is deposited over the semiconductor device structures wherein the BPSG layer is deposited while the wafer is within the BPSG deposition chamber. The BPSG layer is flowed wherein no fluorine gas bubble is formed within the BPSG layer to complete the formation of the BPSG dielectric layer on the wafer without delamination in the fabrication of an integrated circuit device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.