Han-Chung Chen
12Patents
4h-index
18Co-inventors
57Inventor score
Filing activity: Aug 29, 1997 → Nov 14, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6090675A | Formation of dielectric layer employing high ozone:tetraethyl-ortho-silicate ratios during chemical vapor deposition | Electricity | 32 | Expired |
| US8303338B2 | Grounding electrical connector | Electricity | 8 | Active |
| US5994213A | Aluminum plug process | Electricity | 5 | Expired |
| US9859669B2 | Coaxial cable connector | Electricity | 5 | Active |
| US5843838A | Modified clean recipe to suppress formation of BPSG bubble | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6294483A | Method for preventing delamination of APCVD BPSG films | Electricity | 3 | Expired |
| US5994219A | Add one process step to control the SI distribution of Alsicu to improved metal residue process window | Electricity | 2 | Expired |
| US10103459B2 | Connector for coaxial cable | Electricity | 2 | Active |
| US6245688A | Dry Air/N2 post treatment to avoid the formation of B/P precipitation after BPSG film deposition | Electricity | 1 | Expired |
| US8897027B2 | Bonding pad structure | Emerging Cross-Sectional Technologies | 0 | Active |
| US10381791B2 | Coaxial cable connector | Electricity | 0 | Active |
| US7205209B2 | Fabrication of stacked dielectric layer for suppressing electrostatic charge buildup | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.