Semiconductor device having a projecting element region
US5844278A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1995 |
| Grant date | Dec 1, 1998 |
| Priority date | — |
| Expiry date | Sep 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/671
Abstract
The present invention provides a semiconductor device which includes a substrate having a projection-shaped semiconductor element region, a gate electrode formed through a gate insulating film on the upper face and side face of the element region, and a first conductivity type source region and drain region provided in a manner to form a channel region on the upper face of the element region across the gate electrode, and which has a high concentration impurity region containing a second conductivity type impurity at a concentration higher than that on the surface of the channel region in the central part of the projection-shaped semiconductor element region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.