Semiconductor laser devices
US5844931A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1997 |
| Grant date | Dec 1, 1998 |
| Priority date | — |
| Expiry date | Jul 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser which does not cause a sudden failure due to an electric surge. A ridge that is formed by a GaAs buffer layer, an n-InGaP cladding layer which is lattice-matched to a GaAs substrate, a strained-quantum well active layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, a p-GaAs waveguide layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, and a p-GaAs cap layer is constructed on the n-GaAs substrate by being buried therein by an n-InGaP current-blocking layer. A device stripe is constructed by a current-injected region in the device and current-non-injected regions near facets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.