Integrated circuit fabrication
US5846871A · kind A · utility
16Cited by
21References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1997 |
| Grant date | Dec 8, 1998 |
| Priority date | — |
| Expiry date | Aug 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0174
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Undesirable counter doping of n.sup.+ /p.sup.+ gates illustratively through cross diffusion through an overlying silicide is inhibited by insertion of layers of titanium nitride and titanium, tungsten or tantalum between the polysilicon gates and an overlying silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.