Metal film etching method
US5846886A · kind A · utility
10Cited by
5References
6Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 28, 1997 |
| Grant date | Dec 8, 1998 |
| Priority date | — |
| Expiry date | Feb 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal film etching method etches selectively a metal film formed on a layer insulating film provided with viaholes so as to cover the surface of the layer insulating film and fill up the viaholes so that the metal film excluding portions there of filling up the viaholes are removed completely without forming a pit in the portions of the metal film filling up the viaholes. The metal film etching method uses a mixed reactive gas of a gas containing fluorine atoms, a gas containing chlorine atoms and oxygen gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.