Semiconductor electro-optical device
US5847410A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 25, 1996 |
| Grant date | Dec 8, 1998 |
| Priority date | — |
| Expiry date | Nov 25, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A display device comprising a pixel portion having a thin film transistor using silicon as a semiconductor layer and a pixel electrode connected to the thin film transistor, wherein: said pixel electrode having a first transparent electrically conductive film electrically connected to said semiconductor layer and a second transparent electrically conductive film disposed on the first transparent electrically conductive film; said first transparent electrically conductive film comprises an oxide layer of a first metal having an oxidation potential lower than that of silicon; and said second transparent electrically conductive film comprises an oxide layer of a second metal having an oxidation potential higher than that of silicon. Also claimed is a process for fabricating the display device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.