Setsuo Nakajima
120Patents
39h-index
61Co-inventors
93Inventor score
Filing activity: Apr 23, 1979 → Feb 27, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5847410A | Semiconductor electro-optical device | Physics | 399 | Expired |
| US5757456A | Display device and method of fabricating involving peeling circuits from one substrate and mounting on other | Electricity | 388 | Expired |
| US5834327A | Method for producing display device | Electricity | 359 | Expired |
| US5712191A | Method for producing semiconductor device | Emerging Cross-Sectional Technologies | 286 | Expired |
| US6165824A | Method of manufacturing a semiconductor device | Electricity | 277 | Expired |
| US6118502A | Using a temporary substrate to attach components to a display substrate when fabricating a passive type display device | Electricity | 263 | Expired |
| US6462723B1 | Semiconductor device and method for manufacturing the same | Physics | 157 | Expired |
| US7060153B2 | Display device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 149 | Expired |
| US6512271B1 | Semiconductor device | Electricity | 143 | Expired |
| US7050138B1 | Method of manufacturing a display device having a driver circuit attached to a display substrate | Electricity | 122 | Expired |
| US6518594B1 | Semiconductor devices | Electricity | 119 | Expired |
| US6603453B2 | Semiconductor device and method for manufacturing the same | Physics | 112 | Expired |
| US6420758B1 | Semiconductor device having an impurity region overlapping a gate electrode | Electricity | 111 | Expired |
| US6246070A | Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same | Physics | 93 | Expired |
| US6479333B1 | Method of manufacturing a semiconductor device | Electricity | 90 | Expired |
| US7214555B2 | Method for producing display device | Electricity | 88 | Expired |
| US7271858B2 | Method for producing display-device | Electricity | 77 | Expired |
| US6455359B1 | Laser-irradiation method and laser-irradiation device | Electricity | 75 | Expired |
| US5821597A | Photoelectric conversion device | Emerging Cross-Sectional Technologies | 75 | Expired |
| US5937282A | Method for producing semiconductor device | Emerging Cross-Sectional Technologies | 74 | Expired |
| US6780687B2 | Method of manufacturing a semiconductor device having a heat absorbing layer | Electricity | 74 | Expired |
| US6359320B1 | Thin-film transistor with lightly-doped drain | Electricity | 73 | Expired |
| US6806495B1 | Semiconductor device and method of fabricating the same | Physics | 71 | Expired |
| US6960787B2 | Semiconductor device and method for manufacturing the same | Physics | 70 | Expired |
| US7247882B2 | Display device | Physics | 67 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.