Method of cleaning a surface of a semiconductor substrate by a heat treatment in an inert gas atmosphere
US5849102A · kind A · utility
4Cited by
20References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 28, 1997 |
| Grant date | Dec 15, 1998 |
| Priority date | — |
| Expiry date | Feb 28, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of cleaning a surface of a semiconductor comprising the steps of a) washing the semiconductor surface with chemicals to remove particles and metal impurities from the surface; b) inserting the semiconductor into a furnace that contains a gas mixture of nitrogen gas and a second inert gas; c) replacing the gas mixture with a third inert gas; d) heating the furnace containing the third inert gas for a predetermined period of time; and e) replacing the third inert gas in the furnace with oxygen and thermally oxidizing the surface of the semiconductor to form an oxide film on the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.