Simulation apparatus for optimizing sputtering apparatus and simulation method therefor
US5850356A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1996 |
| Grant date | Dec 15, 1998 |
| Priority date | — |
| Expiry date | Sep 13, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/23
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A simulation apparatus for simulating and optimizing a configuration of a sputtering apparatus including a target surface temperature calculating unit for calculating a temperature of a target surface in consideration of cooling of the target, an atom initial velocity calculating unit for calculating an initial velocity of atoms within the target based on the calculated target surface temperature, an ion incidence rate calculating unit for calculating an incidence rate of the incident ions into the target to determine a position at which the incident ions collide against the target, an atom trajectory calculating unit for obtaining trajectories of atoms within the target based on each of calculation results and a sputtered atom ejection angle distribution unit for extracting sputtered atoms based on the calculation results to obtain ejection angle distribution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.