Method for dry etching sidewall polymer
US5851302A · kind A · utility
17Cited by
17References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 19, 1997 |
| Grant date | Dec 22, 1998 |
| Priority date | — |
| Expiry date | Feb 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of plasma etching photoresist and sidewall polymer with an etch gas mixture comprising CF.sub.4 and H.sub.2 O demonstrating very aggressive ashrate of photoresist but maintains an exceptionally low etch rate for titanium nitride and other metals is provided. The very low TiN etch rate permits the inventive method to effectively breakdown sidewall polymer without removing any significant amount of these metals. The invention is particularly suited for stripping sidewall polymer from etched via holes and from etched metal lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.