Plasma process method and apparatus
US5851600A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1997 |
| Grant date | Dec 22, 1998 |
| Priority date | — |
| Expiry date | Oct 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32431
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Plasma processing gas is introduced into an upper portion of a processing vessel and a film-formation gas is simultaneously introduced into the vicinity of a substrate to be processed. The plasma processing gas is ionized to form a first plasma and any of the plasma processing gas that has temporarily recombined in locations close to the substrate to be processed is re-ionized as a second plasma. As a result, the density of etchant ions used for cutting away overhangs around the openings of grooves can be increased. In other words, the number of etchant ions can be increased. This makes it possible to reduce the bias voltage applied to the substrate to be processed, preventing damage thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.