Process for passivating semiconductor laser structures with severe steps in surface topography
US5851849A · kind A · utility
156Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 1997 |
| Grant date | Dec 22, 1998 |
| Priority date | — |
| Expiry date | May 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The specification describes a process for passivating semiconductor laser structures with severe steps in the surface topography. The technique involves atomic layer deposition to produce the passivating layer which has exceptional coverage and uniformity, even in the case of trench features with trench aspect ratios as large as 5. In addition, the passivation produced by this process has excellent environmental stability, and affords protection against air born contaminant induced degradation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.