Method for making a capacitor
US5851870A · kind A · utility
21Cited by
17References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 1996 |
| Grant date | Dec 22, 1998 |
| Priority date | — |
| Expiry date | May 9, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/014
Abstract
A novel capacitor design for use in semiconductor integrated circuits is disclosed. The capacitor includes a metal-dielectric-metal stack formed within a window and upon a conductive substrate. Contact to the top plate of the capacitor is through a window within a window, while contact to the bottom plate is achieved by a guard ring which contacts the conductive substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.