Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC
US5851908A · kind A · utility
55Cited by
11References
12Claims
0Family size
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Key dates
| Filing date | May 8, 1995 |
| Grant date | Dec 22, 1998 |
| Priority date | — |
| Expiry date | May 8, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for introduction of an impurity dopant into a semiconductor layer of SiC comprises the step of ion implantation of the dopant in the semiconductor layer at a low temperature. The ion implantation is carried out in such a way that a doped and amorphous near-surface layer is formed, and the implantation step is followed by a step of annealing the semiconductor layer at such a high temperature that the dopant diffuses into the non-implanted sub-layer of the semiconductor layer following the near-surface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.