Method of forming a semiconductor device by DUV resist patterning
US5851927A · kind A · utility
14Cited by
10References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1997 |
| Grant date | Dec 22, 1998 |
| Priority date | — |
| Expiry date | Aug 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device, including providing a silicon substrate (10), forming a gate stack (11) on the substrate (10), coating a deep ultra-violet (DUV) photoresist (30) on the gate stack (11), exposing and developing the photoresist (30), and etching the gate stack (11). According to the present invention, the gate stack (11) has a dielectric nitride layer (26), particularly, a silicon nitride layer. An adhesive oxide layer (28) is provided between the nitride layer (26) and the photoresist (30) to prevent undesirable lifting of the photoresist (30). Yield is greatly increased and defectivity is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.