Thin epitaxy resurf integrated circuit containing high voltage p-channel and n-channel devices with source or drain not tied to ground

US5852314A · kind A · utility

Assignee

• SGS-Thomson Microelectronics S.A. · IT

Inventors

• Riccardo Depetro · Domodossola, IT
• Claudio Contiero · Milano, IT
• Antonio Andreini · Milano, IT

Key dates

• Filing date: Apr 30, 1996
• Grant date: Dec 22, 1998
• Expiry date: Apr 30, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

N-channel LDMOS and p-channel MOS devices for high voltage integrated in a BiCMOS integrated circuit and exploiting a RESURF condition are provided with a buried region of the same type of conductivity of the epitaxial layer and a doping level intermediate between the doping level of the epitaxial layer and the doping level of a well region. The devices may be configured as source or drain followers without problems.