Antonio Andreini
9Patents
6h-index
9Co-inventors
52Inventor score
Filing activity: Jan 22, 1987 → Jun 9, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5852314A | Thin epitaxy resurf integrated circuit containing high voltage p-channel and n-channel devices with source or drain not tied to ground | Electricity | 40 | Expired |
| US4774198A | Self-aligned process for fabricating small DMOS cells | Electricity | 40 | Expired |
| US6194761A | VDMOS transistor protected against over-voltages between source and gate | Electricity | 17 | Expired |
| US6362036B1 | VDMOS transistor protected against over-voltages between source and gate | Electricity | 16 | Expired |
| US4892836A | Method for manufacturing semiconductor integrated circuits including CMOS and high-voltage electronic devices | Electricity | 9 | Expired |
| US4721686A | Manufacturing integrated circuits containing P-channel MOS transistors and bipolar transistors utilizing boron and arsenic as dopants | Electricity | 8 | Expired |
| US5602914A | Device for limiting the working voltage for mechanical switches in telephony | Electricity | 5 | Expired |
| US5448636A | Device for limiting the working voltage mechanical switches in telephony | Electricity | 3 | Expired |
| US7126230B2 | Semiconductor electronic device and method of manufacturing thereof | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.