Speed enhanced level shifting circuit utilizing diode capacitance
US5852367A · kind A · utility
2Cited by
7References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1992 |
| Grant date | Dec 22, 1998 |
| Priority date | — |
| Expiry date | Sep 1, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/1738
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A level shifting circuit operating at low power with minimal signal delays. The circuit employs high capacitance diodes to shift signals from a first signal level to a second higher or lower signal level. The capacitance is obtained by either providing a discrete capacitor shunt across the diode or by using diode connected transistors. Diode connected transistors are biased to provide the necessary capacitance. A pair of high capacitance diode level shifters is used as a differential pair level shifter by connecting the reference resistors to a common reference potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.