Method for fabricating thin films of barium strontium titanate without exposure to oxygen at high temperatures
US5853500A · kind A · utility
42Cited by
7References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 1997 |
| Grant date | Dec 29, 1998 |
| Priority date | — |
| Expiry date | Jul 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A liquid precursor containing barium, strontium, and titanium, is applied to a first electrode, dried in air at a first temperature of 160.degree. C. and then a second temperature of 400.degree. C., and annealed at a temperature of 800.degree. C. in nitrogen to form a thin film of barium strontium titanate. A second electrode is deposited and then the device is patterned to form a capacitor, and a second anneal is performed at a temperature of 800.degree. C. in nitrogen. In this manner, a high electronic quality thin film of barium strontium titanate is fabricated without a high-temperature oxygen anneal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.