Positive photoresist compositions and multilayer resist materials using the same
US5853948A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1997 |
| Grant date | Dec 29, 1998 |
| Priority date | — |
| Expiry date | Oct 29, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0226
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive photoresist composition comprising (A) an alkali-soluble resin; (B) a quinonediazido group containing compound; and (C) at least one sulfonyl halide represented by the following general formula (I): EQU R.sup.1 --SO.sub.2 --X (I) where R.sup.1 is an alkyl group, a substituted alkyl group, an alkenyl group, an aryl group or a substituted aryl group; X is a halogen atom, as well as a multilayer resist material using this composition. Very fine (<0.4 .mu.m) resist patterns can be formed that have high feature or edge integrity, that provide good contrast between exposed and unexposed areas after development and that assure a wider margin of exposure, better depth-of-focus characteristics and sharper cross-sectional profiles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.