Optimized dry etching procedure, using an oxygen containing ambient, for small diameter contact holes
US5854135A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 9, 1997 |
| Grant date | Dec 29, 1998 |
| Priority date | — |
| Expiry date | Apr 9, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An anisotropic RIE procedure for creating a small diameter SAC opening, in an insulator layer, used in the fabrication sequence of a MOSFET device, and using a large area test site for RIE end point monitoring, has been developed. The RIE procedure features a RIE ambient, including oxygen as part of the RIE ambient, resulting in equal amounts of polymer deposition on the small diameter SAC opening, as well as on the large area test sites, during the reactive ion etching of the small diameter, SAC opening. This allows accurate monitoring of the RIE procedure to be performed on the large area test site, using optical ellipsometry procedures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.