Method for autostoichiometric chemical vapor deposition
US5855956A · kind A · utility
1Cited by
3References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 1994 |
| Grant date | Jan 5, 1999 |
| Priority date | — |
| Expiry date | Nov 23, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The chemical vapor deposition of a single phase of a double metal oxide having a stoichiometric ratio results in a fully dense film. The film is deposited by polycondensation of a partially hydrolyzed precursor reacted from water vapor mixed with a volatile, metalorganic precursor having the desired stoichiometric ratio. The film may be annealed to form a perfect crystal of stoichiometric, single phase, double metal oxide having substantially improved optical characteristics for laser light transmission and other electro-optical applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.