Method of fabricating a programmable function system block using two masks and a sacrificial oxide layer between the bottom metal and an amorphous silicon antifuse structure
US5856213A · kind A · utility
3Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1996 |
| Grant date | Jan 5, 1999 |
| Priority date | — |
| Expiry date | Jul 25, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An antifuse structure is formed between two metal contacts in which a thin oxide layer is formed on the first or bottom metal, a shallow via is provided oxide layer and a layer of amorphous silicon is deposited over the thin oxide and into the shallow via without leaving the usual furrows in the amorphous silicon and thereby eliminating the step coverage problems of cusps forming in the subsequently applied second or top metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.