Manufacturing method for making bipolar device having double polysilicon structure
US5856228A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 1996 |
| Grant date | Jan 5, 1999 |
| Priority date | — |
| Expiry date | Nov 27, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/011
Abstract
A semiconductor device and a manufacturing method therefor which can simultaneously realize both a reduction in base transit time by a reduction in base width and a reduction in base resistance by a reduction in link base resistance. The semiconductor device is manufactured by the method including the steps of forming a first impurity diffused layer of a first conduction type in a semiconductor substrate; forming a conducting film connected to the first impurity diffused layer; forming a first insulating film on the conducting film; forming a first hole through a laminated film composed of the first insulating film and the conducting film; forming a second impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the first hole; forming a side wall from a second insulating film in the first hole to form a second hole; and forming a third impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the second hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.