Dark current reducing guard ring

US5859450A · kind A · utility

Assignee

• Intel Corporation · US

Inventors

• Lawrence T. Clark · Phoenix, US
• Mark A. Beiley · Chandler, US

Key dates

• Filing date: Sep 30, 1997
• Grant date: Jan 12, 1999
• Expiry date: Sep 30, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

A photodiode is provided. The photodiode includes an insulative region (IR) that permits passage of light therethrough. The photodiode also includes a substrate region of a first conductivity type and a well region of a second conductivity type. The well is formed within the substrate, beneath the IR. The well is demarcated from the substrate by a first surface. The photodiode further includes a heavily doped region (HDR) of the second conductivity type. The HDR is formed within the IR at a first position. The first surface meets the HDR at substantially the first position.