High voltage power schottky with aluminum barrier metal spaced from first diffused ring
US5859465A · kind A · utility
37Cited by
24References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 1996 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | Oct 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A vertical conduction Schottky device having a reverse voltage rating in excess of 400 volts uses an aluminum barrier metal in contact with an N.sup.- epitaxial silicon surface. A diffused P.sup.+ guard ring surrounds the barrier metal contact and is spaced therefrom by a small gap which is fully depleted at a low reverse voltage to connect the ring to the barrier contact under reverse voltage conditions. Lifetime killing is used for the body of the diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.