Method for fabricating capacitors of semiconductor devices
US5861332A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1997 |
| Grant date | Jan 19, 1999 |
| Priority date | — |
| Expiry date | Jun 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A method for fabricating a capacitor of a semiconductor device, which is capable improving the chemical and thermal stability of lower electrodes. The method includes forming an interlayer insulating film provided with a contact hole over a semiconductor substrate, forming a conductive polysilicon plug in the contact hole, sequentially forming a titanium film and a titanium nitride film over the entire exposed surface of the resulting structure, selectively removing the titanium film and titanium nitride film by use of a first storage electrode mask, thereby forming a titanium film pattern and a titanium nitride film pattern, sequentially forming a ruthenium film and a ruthenium dioxide film over the entire exposed surface of the resulting structure, selectively removing the ruthenium film and the ruthenium dioxide film by use of a second storage electrode mask, thereby forming a ruthenium film pattern and a ruthenium dioxide film pattern, forming an SrO film over the entire exposed surface of the resulting structure, forming a high dielectric film over the SrO film, and forming an upper electrode over the high dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.