Kwon Hong
70Patents
9h-index
78Co-inventors
81Inventor score
Filing activity: Mar 30, 1990 → May 11, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5315452A | Apparatus and method for automatically adjusting recording speed of a recorder | Physics | 54 | Expired |
| US8456909B2 | Nonvolatile memory device and method for fabricating the same | Electricity | 30 | Active |
| US6825129B2 | Method for manufacturing memory device | Electricity | 25 | Expired |
| US8821752B2 | Etching composition and method for fabricating semiconductor device using the same | Electricity | 12 | Active |
| US5861332A | Method for fabricating capacitors of semiconductor devices | Electricity | 11 | Expired |
| US8748966B2 | Three dimensional non-volatile memory device and method of manufacturing the same | Electricity | 11 | Active |
| US5179446A | Radio transmitting and receiving circuits of a video camera having a detached view finder | Electricity | 11 | Expired |
| US6319765A | Method for fabricating a memory device with a high dielectric capacitor | Electricity | 11 | Expired |
| US5475295A | Electronic device capable of checking power supply status | Emerging Cross-Sectional Technologies | 10 | Expired |
| US8692314B2 | Non-volatile memory device and method for fabricating the same | Electricity | 9 | Active |
| US8349689B2 | Non-volatile memory device and method for fabricating the same | Electricity | 9 | Active |
| US5227732A | Noise reduction circuit | Electricity | 9 | Expired |
| US6383865B2 | Method for fabricating a capacitor in a semiconductor device | Electricity | 8 | Expired |
| US8288263B2 | Method for fabricating semiconductor device | Electricity | 7 | Active |
| US9362301B2 | Method for fabricating pipe gate nonvolatile memory device | Electricity | 6 | Active |
| US5821174A | Passivation layer of semiconductor device and method for forming the same | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6689623B2 | Method for forming a capacitor | Electricity | 6 | Expired |
| US6451666B2 | Method for forming a lower electrode by using an electroplating method | Electricity | 6 | Expired |
| US6756261B2 | Method for fabricating capacitors in semiconductor devices | Electricity | 4 | Expired |
| US6465260B1 | Semiconductor device having a ferroelectric capacitor and method for the manufacture thereof | Electricity | 4 | Expired |
| US6395601B2 | Method for forming a lower electrode for use in a semiconductor device | Electricity | 4 | Expired |
| US7238574B1 | Flash memory device and method of manufacturing the same | Electricity | 4 | Active |
| US6461913B2 | Semiconductor memory device having plug contacted to a capacitor electrode and method for fabricating a capacitor of the semiconductor memory device | Electricity | 3 | Expired |
| US8604537B2 | Nonvolatile memory device and method of fabricating the same | Electricity | 3 | Active |
| US8654579B2 | Non-volatile memory device and method of manufacturing the same | Physics | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.