Method of forming a polycide film
US5861340A · kind A · utility
41Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 15, 1996 |
| Grant date | Jan 19, 1999 |
| Priority date | — |
| Expiry date | Feb 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a polycide thin film. First, a silicon layer is formed. Next, a thin barrier layer is formed on the first silicon layer. A second silicon layer is then formed on the barrier layer. Next, a metal layer is formed on the second silicon layer. The metal layer and the second silicon layer are then reacted together to form a silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.