Process for forming silicon carbide films and microcomponents
US5861346A · kind A · utility
19Cited by
4References
19Claims
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Key dates
| Filing date | Jul 27, 1995 |
| Grant date | Jan 19, 1999 |
| Priority date | — |
| Expiry date | Jul 27, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.