Device for protection after a page-write operation in an electrically programmable memory
US5862075A · kind A · utility
3Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1997 |
| Grant date | Jan 19, 1999 |
| Priority date | — |
| Expiry date | Nov 14, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A FLASH memory is compatible with a standard EEPROM memory in terms of a write-by-page instruction with write protection. A circuit successively addresses one of the columns of a storage matrix in order to write a page previously stored in buffers, and the circuit addresses the writing of a protection bit after the writing of the page.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.