Jean Devin
41Patents
12h-index
19Co-inventors
78Inventor score
Filing activity: Dec 16, 1987 → Feb 15, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4964079A | Electrically programmable memory with several information bits per cell | Physics | 139 | Expired |
| US6807103B2 | Page-erasable flash memory | Physics | 120 | Expired |
| US6219277A | Device and method for the reading of EEPROM cells | Physics | 49 | Expired |
| US4958324A | Method for the testing of electrically programmable memory cells, and corresponding integrated circuit | Physics | 33 | Expired |
| US5579265A | Memory redundancy circuit | Physics | 23 | Expired |
| US6411544B1 | Circuit for detecting and recording a voltage surge | Physics | 19 | Expired |
| US5950224A | Electrically modifiable non-volatile memory circuit having means for autonomous refreshing dependent upon on periodic clock pulses | Physics | 18 | Expired |
| US6714453B2 | Flash memory including means of checking memory cell threshold voltages | Physics | 17 | Expired |
| US5303189A | High-speed memory with a limiter of the drain voltage of the cells | Physics | 16 | Expired |
| US6060932A | Variable frequency charge pump | Electricity | 15 | Expired |
| US5058069A | Device for addressing of redundant elements of an integrated circuit memory | Physics | 14 | Expired |
| US5099451A | Memory array with electrically programmable memory cells and electricaly unprogrammable, unerasable memory cells, both types of memory cells having floating gate transistors | Physics | 14 | Expired |
| US4860256A | Integrated circuit provided with switching elements for changeover to redundancy elements in a memory | Physics | 12 | Expired |
| US4947375A | Addressing of redundant columns and rows of an integrated circuit memory | Physics | 12 | Expired |
| US5537349A | Memory in integrated circuit form with improved reading time | Physics | 9 | Expired |
| US5561621A | Non-volatile programmable bistable multivibrator with reduced parasitics in reading mode notably for memory redundancy circuit | Physics | 8 | Expired |
| US6034895A | Method and circuit for the programming and erasure of a memory | Physics | 8 | Expired |
| US7068538B2 | Memory circuit with non-volatile identification memory and associated method | Physics | 7 | Expired |
| US6398286B1 | Reinforced and lightweight motor-vehicle bonnett | Performing Operations; Transporting | 7 | Expired |
| US5436479A | Electrically programmable integrated memory with only one transistor | Electricity | 7 | Expired |
| US6011724A | Circuit and method for the erasure of a non-volatile and electrically erasable memory | Electricity | 6 | Expired |
| US6621720B1 | Voltage production circuit | Physics | 6 | Expired |
| US5991199A | Device and method for the programming of a memory | Physics | 5 | Expired |
| US5742546A | Method and device for address decoding in an integrated circuit memory | Physics | 5 | Expired |
| US5883833A | Method and circuit for the programming and erasure of a memory | Physics | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.