Semiconductor device including plated heat sink and airbridge for heat dissipation
US5864169A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1995 |
| Grant date | Jan 26, 1999 |
| Priority date | — |
| Expiry date | Jul 19, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having opposite front and rear surfaces; a semiconductor element disposed on the front surface of the semiconductor substrate and including an electrode; a PHS for dissipating heat generated in the semiconductor element, the PHS including a metal layer and disposed on the rear surface of the semiconductor substrate; a via-hole including a through-hole penetrating through the semiconductor substrate from the front surface to the rear surface and having an inner surface, and a metal disposed in the through-hole and contacting the PHS; and an air-bridge wiring including a metal film and having first and second portions, the air-bridge contacting the electrode of the semiconductor element at the first portion and contacting the metal of the via-hole at the second portion. Therefore, heat produced in the semiconductor element is transferred to the PHS not only through the semiconductor substrate just under the element but also through the air-bridge wiring and the via-hole, whereby the heat dissipating property of the device is significantly improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.