Epitaxial wafer and compound semiconductor light emitting device, and method of fabricating the same
US5864573A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1996 |
| Grant date | Jan 26, 1999 |
| Priority date | — |
| Expiry date | Apr 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor light emitting device having a long life and high performance and a method for industrially fabricating the same are provided. The compound semiconductor light emitting device includes a GaP substrate, a buffer layer consisting of InN which is formed on the substrate, a relaxation layer consisting of In.sub.x Ga.sub.1-x N which is formed on the buffer layer, and a luminescent layer consisting of In.sub.k Ga.sub.1-k N which is formed on the relaxation layer. In this description, k represents a constant value within the range of 0<k<1, and x (excluding 1 and k) decreases from 1 to k through the relaxation layer in the direction of thickness from the side adjacent the buffer layer toward the side adjacent the luminescent layer. In fabrication of the compound semiconductor light emitting device having the aforementioned structure, a buffer layer and an epitaxial layer are formed by the same organic metal chloride vapor phase epitaxy process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.