Process for producing a silicon capacitor

US5866452A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Josef Willer · Riemerling, DE
• Hermann Wendt · Grasbrunn, DE
• Herbert Schafer · Höhenkirchen-Siegertsbrunn, DE

Key dates

• Filing date: Feb 10, 1997
• Grant date: Feb 2, 1999
• Expiry date: Feb 10, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/711

Abstract

To produce a silicon capacitor, hole apertures at whose surface a conductive zone (40) is formed by doping and whose surface is provided with a dielectric layer (6) and a conductive layer (7) are generated in an n-doped silicon substrate (1). To compensate for mechanical strains in the silicon substrate (1) brought about by the doping of the conductive zone (40), the conductive zone (40) is additionally doped with germanium which is outdiffused from a germanium-doped layer.